title: Epitaxial B-Graphene: Large-Scale Growth and Atomic Structure
metadata.name: dc.contributor.author
metadata.value: Usachov, Dmitry Yu.
metadata.lang: -
metadata.name: dc.contributor.author
metadata.value: Fedorov, Alexander V.
metadata.lang: -
metadata.name: dc.contributor.author
metadata.value: Petukhov, Anatoly E.
metadata.lang: -
metadata.name: dc.contributor.author
metadata.value: Vilkov, Oleg Yu.
metadata.lang: -
metadata.name: dc.contributor.author
metadata.value: Rybkin, Artem G.
metadata.lang: -
metadata.name: dc.contributor.author
metadata.value: Otrokov, Mikhail M.
metadata.lang: -
metadata.name: dc.contributor.author
metadata.value: Arnau, Andrés
metadata.lang: -
metadata.name: dc.contributor.author
metadata.value: Chulkov, Evgueni V.
metadata.lang: -
metadata.name: dc.contributor.author
metadata.value: Yashina, Lada V.
metadata.lang: -
metadata.name: dc.contributor.author
metadata.value: Farjam, Mani
metadata.lang: -
metadata.name: dc.contributor.author
metadata.value: Adamchuk, Vera K.
metadata.lang: -
metadata.name: dc.contributor.author
metadata.value: Senkovskiy, Boris V.
metadata.lang: -
metadata.name: dc.contributor.author
metadata.value: Laubschat, Clemens
metadata.lang: -
metadata.name: dc.contributor.author
metadata.value: Vyalikh, Denis V.
metadata.lang: -
metadata.name: dc.date.accessioned
metadata.value: 2015-07-28T15:49:57Z
metadata.lang: -
metadata.name: dc.date.available
metadata.value: 2015-07-28T15:49:57Z
metadata.lang: -
metadata.name: dc.date.issued
metadata.value: 2015-06-29
metadata.lang: -
metadata.name: dc.identifier.citation
metadata.value: ACS Nano 9, 7314-7322 (2015)
metadata.lang: en_GB
metadata.name: dc.identifier.other
metadata.value: DOI: 10.1021/acsnano.5b02322
metadata.lang: -
metadata.name: dc.identifier.uri
metadata.value: http://hdl.handle.net/11701/1675
metadata.lang: -
metadata.name: dc.description.abstract
metadata.value: Embedding foreign atoms or molecules in graphene has become the key approach in its functionalization and is intensively used for tuning its structural and electronic properties. Here, we present an efficient method based on chemical vapor deposition for large scale growth of boron-doped graphene (B-graphene) on Ni(111) and Co(0001) substrates using carborane molecules as the precursor. It is shown that up to 19 at.% of boron can be embedded in the graphene matrix and that a planar C-B sp2 network is formed. It is resistant to air exposure and widely retains the electronic structure of graphene on metals. The large-scale and local structure of this material has been explored depending on boron content and substrate. By resolving individual impurities with scanning tunneling microscopy we have demonstrated the possibility for preferential substitution of carbon with boron in one of the graphene sublattices (unbalanced sublattice doping) at low doping level on the Ni(111) substrate. At high boron content the honeycomb lattice of B-graphene is strongly distorted and, therefore, it demonstrates no unballanced sublattice doping.
metadata.lang: en_GB
metadata.name: dc.language.iso
metadata.value: en
metadata.lang: en_GB
metadata.name: dc.subject
metadata.value: graphene, boron, doping, electronic structure, photoemission spectroscopy, tunneling microscopy
metadata.lang: en_GB
metadata.name: dc.title
metadata.value: Epitaxial B-Graphene: Large-Scale Growth and Atomic Structure
metadata.lang: en_GB
metadata.name: dc.type
metadata.value: Article
metadata.lang: en_GB
resources.filename: 2015_ACSNano_Usachov.pdf
resources.url: https://dspace.spbu.ru/bitstream/11701/1675/1/2015_ACSNano_Usachov.pdf
resources.format: Adobe PDF
resources.description: Article
resources.size: 7,48 MB